advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low gate charge r ds(on) 12m fast switching speed i d 45a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200809253 thermal data parameter storage temperature range total power dissipation 44 -55 to 175 operating junction temperature range -55 to 175 linear derating factor 0.352 continuous drain current, v gs @ 10v 32 pulsed drain current 1 120 gate-source voltage + 20 continuous drain current, v gs @ 10v 45 parameter rating drain-source voltage 30 1 ap60t03gs/p rohs-compliant product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP60T03GP) are available for low-profile applications. to-263(s) to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 12 m ? ?
ap60t03gs/p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 30 60 90 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 8.0v 6.0v 5.0v v g =4.0v 0 25 50 75 100 125 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 25 100 175 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 20 40 60 80 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 : 0.1 1 10 100 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0 1 2 3 -50 25 100 175 t j , junction temperature ( o c ) v gs(th) (v) 3
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap60t03gs/p 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 0 6 12 18 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =16v v ds =20v v ds =24v 100 1000 10000 1 8 15 22 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 1ms 100ms dc 10ms 100us t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge t c =25 o c s ingle pulse
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 d1 ---- 5.10(ref) ---- e 9.70 10.10 10.50 e1 ---- 7.40(ref) ---- e2 ---- 6.40(ref) ---- e3 ---- 8.00(ref) ---- e 2.04 2.54 3.04 l1 ---- 2.54(ref) ---- l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 0 ----- 5 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 advanced power electronics corp. symbols part number b b1 e l2 l3 c1 a a1 l4 c ywwsss logo a2 date code (ywwsss) y last digit of the year ww week sss sequence package code 60t03gs e b b1 e d l2 l3 c1 a a1 l4 c a2 d1 e1 meet rohs requirement for low voltage mosfet only e2 e3 l1 5
package outline : to-220 millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 e1 meet rohs requirement
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